RT1A045APTCR Pricing (USD) [420169PC Stock]
- 1 pcs$0.08803
- 3,000 pcs$0.05456
- Nimewo Pati:
- RT1A045APTCR
- Manifakti:
- Rohm Semiconductor
- Detaye deskripsyon:
- MOSFET P-CH 12V 4.5A TSST8.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - SCR - Modil yo, Transistors - Bipolè (BJT) - RF, Tiristors - DIACs, SIDACs, Diodes - RF, Tiristors - TRIACs, Transistors - Pwogramasyon Unijunction, Transistors - Objektif espesyal and Transistors - JFETs ...
- Avantaj konpetitif:
- We specialize in Rohm Semiconductor RT1A045APTCR electronic components. RT1A045APTCR can be shipped within 24 hours after order. If you have any demands for RT1A045APTCR, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
RT1A045APTCR Atribi pwodwi yo
Nimewo Pati :
RT1A045APTCR
Manifakti :
Rohm Semiconductor
Deskripsyon :
MOSFET P-CH 12V 4.5A TSST8
Seri :
-
Estati Pati :
Active
FET Kalite :
P-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
12V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
4.5A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
1.5V, 4.5V
RD sou (Max) @ Id, Vgs :
30 mOhm @ 4.5A, 4.5V
Vgs (th) (Max) @ Id :
1V @ 1mA
Chaje Gate (Qg) (Max) @ Vgs :
40nC @ 4.5V
Vgs (Max) :
-8V
Antre kapasite (Ciss) (Max) @ Vds :
4200pF @ 6V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
650mW (Ta)
Operating Tanperati :
150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
8-TSST
Pake / Ka :
8-SMD, Flat Lead
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