[76PC Stock]
- Nimewo Pati:
- APTMC120AM08CD3AG
- Manifakti:
- Microsemi Corporation
- Detaye deskripsyon:
- MOSFET 2N-CH 1200V 250A D3.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - RF, Transistors - FETs, MOSFETs - Arrays, Transistors - JFETs, Transistors - Pwogramasyon Unijunction, Transistors - Bipolè (BJT) - Single, Tiristors - TRIACs, Tiristors - SCR - Modil yo and Modil pouvwa chofè ...
- Avantaj konpetitif:
- We specialize in Microsemi Corporation APTMC120AM08CD3AG electronic components. APTMC120AM08CD3AG can be shipped within 24 hours after order. If you have any demands for APTMC120AM08CD3AG, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
APTMC120AM08CD3AG Atribi pwodwi yo
Nimewo Pati :
APTMC120AM08CD3AG
Manifakti :
Microsemi Corporation
Deskripsyon :
MOSFET 2N-CH 1200V 250A D3
Seri :
-
Estati Pati :
Active
FET Kalite :
2 N-Channel (Half Bridge)
Karakteristik FET :
Silicon Carbide (SiC)
Drenaj nan Voltage Sous (Vdss) :
1200V (1.2kV)
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
250A (Tc)
RD sou (Max) @ Id, Vgs :
10 mOhm @ 200A, 20V
Vgs (th) (Max) @ Id :
2.2V @ 10mA (Typ)
Chaje Gate (Qg) (Max) @ Vgs :
490nC @ 20V
Antre kapasite (Ciss) (Max) @ Vds :
9500pF @ 1000V
Pouvwa - Max :
1100W
Operating Tanperati :
-40°C ~ 150°C (TJ)
Mounting Kalite :
Chassis Mount
Pake / Ka :
D-3 Module
Pake Aparèy Founisè :
D3
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