Microsemi Corporation - APTMC120AM08CD3AG

KEY Part #: K6522102

[76PC Stock]


    Nimewo Pati:
    APTMC120AM08CD3AG
    Manifakti:
    Microsemi Corporation
    Detaye deskripsyon:
    MOSFET 2N-CH 1200V 250A D3.
    Manufacturer's standard lead time:
    Nan stok
    Lavi etajè:
    Yon ane
    Chip Soti nan:
    Hong Kong
    RoHS:
    Metòd peman:
    Chemen chajman:
    Kategori Fanmi yo:
    KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - IGBTs - Modil yo, Diodes - RF, Diodes - Zener - Single, Tiristors - SCR, Tiristors - TRIACs, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Diodes - Varyab kapasite (Varicaps, Varactors) and Transistors - Objektif espesyal ...
    Avantaj konpetitif:
    We specialize in Microsemi Corporation APTMC120AM08CD3AG electronic components. APTMC120AM08CD3AG can be shipped within 24 hours after order. If you have any demands for APTMC120AM08CD3AG, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    APTMC120AM08CD3AG Atribi pwodwi yo

    Nimewo Pati : APTMC120AM08CD3AG
    Manifakti : Microsemi Corporation
    Deskripsyon : MOSFET 2N-CH 1200V 250A D3
    Seri : -
    Estati Pati : Active
    FET Kalite : 2 N-Channel (Half Bridge)
    Karakteristik FET : Silicon Carbide (SiC)
    Drenaj nan Voltage Sous (Vdss) : 1200V (1.2kV)
    Kouran - Drenaj Kontinye (Id) @ 25 ° C : 250A (Tc)
    RD sou (Max) @ Id, Vgs : 10 mOhm @ 200A, 20V
    Vgs (th) (Max) @ Id : 2.2V @ 10mA (Typ)
    Chaje Gate (Qg) (Max) @ Vgs : 490nC @ 20V
    Antre kapasite (Ciss) (Max) @ Vds : 9500pF @ 1000V
    Pouvwa - Max : 1100W
    Operating Tanperati : -40°C ~ 150°C (TJ)
    Mounting Kalite : Chassis Mount
    Pake / Ka : D-3 Module
    Pake Aparèy Founisè : D3