Nimewo Pati :
APTMC120AM08CD3AG
Manifakti :
Microsemi Corporation
Deskripsyon :
MOSFET 2N-CH 1200V 250A D3
FET Kalite :
2 N-Channel (Half Bridge)
Karakteristik FET :
Silicon Carbide (SiC)
Drenaj nan Voltage Sous (Vdss) :
1200V (1.2kV)
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
250A (Tc)
RD sou (Max) @ Id, Vgs :
10 mOhm @ 200A, 20V
Vgs (th) (Max) @ Id :
2.2V @ 10mA (Typ)
Chaje Gate (Qg) (Max) @ Vgs :
490nC @ 20V
Antre kapasite (Ciss) (Max) @ Vds :
9500pF @ 1000V
Operating Tanperati :
-40°C ~ 150°C (TJ)
Mounting Kalite :
Chassis Mount