STMicroelectronics - STP12NK60Z

KEY Part #: K6414325

[12794PC Stock]


    Nimewo Pati:
    STP12NK60Z
    Manifakti:
    STMicroelectronics
    Detaye deskripsyon:
    MOSFET N-CH 600V 10A TO220.
    Manufacturer's standard lead time:
    Nan stok
    Lavi etajè:
    Yon ane
    Chip Soti nan:
    Hong Kong
    RoHS:
    Metòd peman:
    Chemen chajman:
    Kategori Fanmi yo:
    KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Zener - Arrays, Diodes - RF, Transistors - FETs, MOSFETs - Single, Tiristors - TRIACs, Transistors - FETs, MOSFETs - Arrays, Tiristors - DIACs, SIDACs, Transistors - Bipolè (BJT) - Single and Transistors - Pwogramasyon Unijunction ...
    Avantaj konpetitif:
    We specialize in STMicroelectronics STP12NK60Z electronic components. STP12NK60Z can be shipped within 24 hours after order. If you have any demands for STP12NK60Z, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    STP12NK60Z Atribi pwodwi yo

    Nimewo Pati : STP12NK60Z
    Manifakti : STMicroelectronics
    Deskripsyon : MOSFET N-CH 600V 10A TO220
    Seri : SuperMESH™
    Estati Pati : Obsolete
    FET Kalite : N-Channel
    Teknoloji : MOSFET (Metal Oxide)
    Drenaj nan Voltage Sous (Vdss) : 600V
    Kouran - Drenaj Kontinye (Id) @ 25 ° C : 10A (Tc)
    Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
    RD sou (Max) @ Id, Vgs : 640 mOhm @ 5A, 10V
    Vgs (th) (Max) @ Id : 4.5V @ 100µA
    Chaje Gate (Qg) (Max) @ Vgs : 59nC @ 10V
    Vgs (Max) : ±30V
    Antre kapasite (Ciss) (Max) @ Vds : 1740pF @ 25V
    Karakteristik FET : -
    Disipasyon Pouvwa (Max) : 150W (Tc)
    Operating Tanperati : 150°C (TJ)
    Mounting Kalite : Through Hole
    Pake Aparèy Founisè : TO-220AB
    Pake / Ka : TO-220-3