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Si kote ou pa nan lis la, tanpri chwazi youn nan sa ki annapre yo:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. Lakay
  2. Pwodwi yo
  3. Disrè Semiconductor Pwodwi yo
  4. Transistors - FETs, MOSFETs - Single
  5. NTD4860NT4G

ON Semiconductor - NTD4860NT4G

KEY Part #: K6403301

NTD4860NT4G Pricing (USD) [235748PC Stock]

  • 1 pcs$0.15689
  • 2,500 pcs$0.09513
Nimewo Pati:
NTD4860NT4G
Manifakti:
ON Semiconductor
Detaye deskripsyon:
MOSFET N-CH 25V 10.4A DPAK.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - FETs, MOSFETs - RF, Diodes - Zener - Single, Transistors - IGBTs - Single, Diodes - Bridge rèktifikateur, Tiristors - SCR, Diodes - Varyab kapasite (Varicaps, Varactors), Modil pouvwa chofè and Transistors - Bipolè (BJT) - Arrays, Pre-partial ...
Avantaj konpetitif:
We specialize in ON Semiconductor NTD4860NT4G electronic components. NTD4860NT4G can be shipped within 24 hours after order. If you have any demands for NTD4860NT4G, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

NTD4860NT4G Atribi pwodwi yo

Nimewo Pati : NTD4860NT4G
Manifakti : ON Semiconductor
Deskripsyon : MOSFET N-CH 25V 10.4A DPAK
Seri : -
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 25V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 10.4A (Ta), 65A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 4.5V, 10V
RD sou (Max) @ Id, Vgs : 7.5 mOhm @ 30A, 10V
Vgs (th) (Max) @ Id : 2.5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 16.5nC @ 4.5V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 1308pF @ 12V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 1.28W (Ta), 50W (Tc)
Operating Tanperati : -55°C ~ 175°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : DPAK
Pake / Ka : TO-252-3, DPak (2 Leads + Tab), SC-63

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