Toshiba Semiconductor and Storage - SSM3J46CTB(TPL3)

KEY Part #: K6416458

SSM3J46CTB(TPL3) Pricing (USD) [934746PC Stock]

  • 1 pcs$0.04375
  • 10,000 pcs$0.04353

Nimewo Pati:
SSM3J46CTB(TPL3)
Manifakti:
Toshiba Semiconductor and Storage
Detaye deskripsyon:
MOSFET P-CH 20V 2A CST3B.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
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Avantaj konpetitif:
We specialize in Toshiba Semiconductor and Storage SSM3J46CTB(TPL3) electronic components. SSM3J46CTB(TPL3) can be shipped within 24 hours after order. If you have any demands for SSM3J46CTB(TPL3), Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SSM3J46CTB(TPL3) Atribi pwodwi yo

Nimewo Pati : SSM3J46CTB(TPL3)
Manifakti : Toshiba Semiconductor and Storage
Deskripsyon : MOSFET P-CH 20V 2A CST3B
Seri : U-MOSVI
Estati Pati : Active
FET Kalite : P-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 20V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 2A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 1.5V, 4.5V
RD sou (Max) @ Id, Vgs : 103 mOhm @ 1.5A, 4.5V
Vgs (th) (Max) @ Id : 1V @ 1mA
Chaje Gate (Qg) (Max) @ Vgs : 4.7nC @ 4.5V
Vgs (Max) : ±8V
Antre kapasite (Ciss) (Max) @ Vds : 290pF @ 10V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : -
Operating Tanperati : 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : CST3B
Pake / Ka : 3-SMD, No Lead