IAUS165N08S5N029ATMA1 Pricing (USD) [42793PC Stock]
- 1 pcs$0.91372
- Nimewo Pati:
- IAUS165N08S5N029ATMA1
- Manifakti:
- Infineon Technologies
- Detaye deskripsyon:
- MOSFET N-CH 80V 660A PG-HSOG-8-1.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - RF, Transistors - IGBTs - Arrays, Transistors - FETs, MOSFETs - Single, Tiristors - DIACs, SIDACs, Diodes - Zener - Single, Transistors - Bipolè (BJT) - RF, Transistors - IGBTs - Single and Transistors - Bipolè (BJT) - Single ...
- Avantaj konpetitif:
- We specialize in Infineon Technologies IAUS165N08S5N029ATMA1 electronic components. IAUS165N08S5N029ATMA1 can be shipped within 24 hours after order. If you have any demands for IAUS165N08S5N029ATMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IAUS165N08S5N029ATMA1 Atribi pwodwi yo
Nimewo Pati :
IAUS165N08S5N029ATMA1
Manifakti :
Infineon Technologies
Deskripsyon :
MOSFET N-CH 80V 660A PG-HSOG-8-1
Seri :
Automotive, AEC-Q101, OptiMOS™
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
80V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
165A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
6V, 10V
RD sou (Max) @ Id, Vgs :
2.9 mOhm @ 80A, 10V
Vgs (th) (Max) @ Id :
3.8V @ 108µA
Chaje Gate (Qg) (Max) @ Vgs :
90nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
6370pF @ 40V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
167W (Tc)
Operating Tanperati :
-55°C ~ 175°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
PG-HSOG-8-1
Pake / Ka :
8-PowerSMD, Gull Wing
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