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Si kote ou pa nan lis la, tanpri chwazi youn nan sa ki annapre yo:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. Lakay
  2. Pwodwi yo
  3. Disrè Semiconductor Pwodwi yo
  4. Transistors - FETs, MOSFETs - Single
  5. RFD16N05LSM9A

ON Semiconductor - RFD16N05LSM9A

KEY Part #: K6392736

RFD16N05LSM9A Pricing (USD) [182092PC Stock]

  • 1 pcs$0.20414
  • 2,500 pcs$0.20312
Nimewo Pati:
RFD16N05LSM9A
Manifakti:
ON Semiconductor
Detaye deskripsyon:
MOSFET N-CH 50V 16A TO-252AA.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - FETs, MOSFETs - RF, Transistors - IGBTs - Arrays, Transistors - Objektif espesyal, Transistors - FETs, MOSFETs - Arrays, Diodes - Zener - Single, Diodes - RF, Transistors - IGBTs - Modil yo and Transistors - IGBTs - Single ...
Avantaj konpetitif:
We specialize in ON Semiconductor RFD16N05LSM9A electronic components. RFD16N05LSM9A can be shipped within 24 hours after order. If you have any demands for RFD16N05LSM9A, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

RFD16N05LSM9A Atribi pwodwi yo

Nimewo Pati : RFD16N05LSM9A
Manifakti : ON Semiconductor
Deskripsyon : MOSFET N-CH 50V 16A TO-252AA
Seri : -
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 50V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 16A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 4V, 5V
RD sou (Max) @ Id, Vgs : 47 mOhm @ 16A, 5V
Vgs (th) (Max) @ Id : 2V @ 250mA
Chaje Gate (Qg) (Max) @ Vgs : 80nC @ 10V
Vgs (Max) : ±10V
Antre kapasite (Ciss) (Max) @ Vds : -
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 60W (Tc)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : TO-252AA
Pake / Ka : TO-252-3, DPak (2 Leads + Tab), SC-63

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