Nimewo Pati :
SIB406EDK-T1-GE3
Manifakti :
Vishay Siliconix
Deskripsyon :
MOSFET N-CH 20V 6A SC-75-6
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
20V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
6A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
2.5V, 4.5V
RD sou (Max) @ Id, Vgs :
46 mOhm @ 3.9A, 4.5V
Vgs (th) (Max) @ Id :
1.4V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
12nC @ 10V
Antre kapasite (Ciss) (Max) @ Vds :
350pF @ 10V
Disipasyon Pouvwa (Max) :
1.95W (Ta), 10W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
PowerPAK® SC-75-6L Single
Pake / Ka :
PowerPAK® SC-75-6L