IXTA80N12T2 Pricing (USD) [41564PC Stock]
- 1 pcs$1.03997
- 50 pcs$1.03480
- Nimewo Pati:
- IXTA80N12T2
- Manifakti:
- IXYS
- Detaye deskripsyon:
- MOSFET N-CH 120V 80A TO-263.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Single, Transistors - JFETs, Diodes - Rèkteur - Single, Diodes - Rèkteur - Arrays, Diodes - Zener - Arrays, Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - IGBTs - Arrays and Tiristors - DIACs, SIDACs ...
- Avantaj konpetitif:
- We specialize in IXYS IXTA80N12T2 electronic components. IXTA80N12T2 can be shipped within 24 hours after order. If you have any demands for IXTA80N12T2, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXTA80N12T2 Atribi pwodwi yo
Nimewo Pati :
IXTA80N12T2
Manifakti :
IXYS
Deskripsyon :
MOSFET N-CH 120V 80A TO-263
Seri :
TrenchT2™
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
120V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
80A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
17 mOhm @ 40A, 10V
Vgs (th) (Max) @ Id :
4V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
80nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
4740pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
325W (Tc)
Operating Tanperati :
-55°C ~ 175°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
TO-263 (IXTA)
Pake / Ka :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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