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Si kote ou pa nan lis la, tanpri chwazi youn nan sa ki annapre yo:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. Lakay
  2. Pwodwi yo
  3. Disrè Semiconductor Pwodwi yo
  4. Transistors - FETs, MOSFETs - Single
  5. EPC2018

EPC - EPC2018

KEY Part #: K6403908

EPC2018 Pricing (USD) [2195PC Stock]

  • 500 pcs$3.64426
Nimewo Pati:
EPC2018
Manifakti:
EPC
Detaye deskripsyon:
GANFET TRANS 150V 12A BUMPED DIE.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Rèkteur - Single, Tiristors - DIACs, SIDACs, Modil pouvwa chofè, Transistors - Bipolè (BJT) - Single, Transistors - Bipolè (BJT) - Arrays, Transistors - IGBTs - Arrays, Transistors - Bipolè (BJT) - RF and Tiristors - TRIACs ...
Avantaj konpetitif:
We specialize in EPC EPC2018 electronic components. EPC2018 can be shipped within 24 hours after order. If you have any demands for EPC2018, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

EPC2018 Atribi pwodwi yo

Nimewo Pati : EPC2018
Manifakti : EPC
Deskripsyon : GANFET TRANS 150V 12A BUMPED DIE
Seri : eGaN®
Estati Pati : Discontinued at Digi-Key
FET Kalite : N-Channel
Teknoloji : GaNFET (Gallium Nitride)
Drenaj nan Voltage Sous (Vdss) : 150V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 12A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 5V
RD sou (Max) @ Id, Vgs : 25 mOhm @ 6A, 5V
Vgs (th) (Max) @ Id : 2.5V @ 3mA
Chaje Gate (Qg) (Max) @ Vgs : 7.5nC @ 5V
Vgs (Max) : +6V, -5V
Antre kapasite (Ciss) (Max) @ Vds : 540pF @ 100V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : -
Operating Tanperati : -40°C ~ 125°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : Die
Pake / Ka : Die
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