IXYS - IXFH50N50P3

KEY Part #: K6394900

IXFH50N50P3 Pricing (USD) [13823PC Stock]

  • 1 pcs$3.29594
  • 30 pcs$3.27954

Nimewo Pati:
IXFH50N50P3
Manifakti:
IXYS
Detaye deskripsyon:
MOSFET N-CH 500V 50A TO-247.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Arrays, Modil pouvwa chofè, Diodes - Zener - Arrays, Diodes - Zener - Single, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Tiristors - SCR, Transistors - Bipolè (BJT) - Arrays, Pre-partial and Tiristors - TRIACs ...
Avantaj konpetitif:
We specialize in IXYS IXFH50N50P3 electronic components. IXFH50N50P3 can be shipped within 24 hours after order. If you have any demands for IXFH50N50P3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IXFH50N50P3 Atribi pwodwi yo

Nimewo Pati : IXFH50N50P3
Manifakti : IXYS
Deskripsyon : MOSFET N-CH 500V 50A TO-247
Seri : HiPerFET™, Polar3™
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 500V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 50A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 120 mOhm @ 25A, 10V
Vgs (th) (Max) @ Id : 5V @ 4mA
Chaje Gate (Qg) (Max) @ Vgs : 85nC @ 10V
Vgs (Max) : ±30V
Antre kapasite (Ciss) (Max) @ Vds : 4335pF @ 25V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 960W (Tc)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Through Hole
Pake Aparèy Founisè : TO-247AD (IXFH)
Pake / Ka : TO-247-3