CSD18543Q3AT Pricing (USD) [162872PC Stock]
- 1 pcs$0.24535
- 250 pcs$0.24413
- 500 pcs$0.21575
- 750 pcs$0.18849
- 1,250 pcs$0.17032
- Nimewo Pati:
- CSD18543Q3AT
- Manifakti:
- Texas Instruments
- Detaye deskripsyon:
- 60V N-CHANNEL NEXFET POWER MOSF.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - IGBTs - Arrays, Diodes - Varyab kapasite (Varicaps, Varactors), Tiristors - SCR - Modil yo, Transistors - Bipolè (BJT) - Single, Transistors - IGBTs - Single, Tiristors - SCR, Diodes - RF and Tranzistò - Bipolè (BJT) - Single, Pre-partial ...
- Avantaj konpetitif:
- We specialize in Texas Instruments CSD18543Q3AT electronic components. CSD18543Q3AT can be shipped within 24 hours after order. If you have any demands for CSD18543Q3AT, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
CSD18543Q3AT Atribi pwodwi yo
Nimewo Pati :
CSD18543Q3AT
Manifakti :
Texas Instruments
Deskripsyon :
60V N-CHANNEL NEXFET POWER MOSF
Seri :
NexFET™
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
60V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
12A (Ta), 60A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
4.5V, 10V
RD sou (Max) @ Id, Vgs :
15.6 mOhm @ 12A, 4.5V
Vgs (th) (Max) @ Id :
2.7V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
14.5nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
1150pF @ 30V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
66W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
8-VSON (3.3x3.3)
Pake / Ka :
8-PowerVDFN
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