Toshiba Semiconductor and Storage - SSM6J414TU,LF

KEY Part #: K6421524

SSM6J414TU,LF Pricing (USD) [708494PC Stock]

  • 1 pcs$0.07455
  • 3,000 pcs$0.07418

Nimewo Pati:
SSM6J414TU,LF
Manifakti:
Toshiba Semiconductor and Storage
Detaye deskripsyon:
MOSFET P CH 20V 6A UF6.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Pwogramasyon Unijunction, Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - Bipolè (BJT) - Arrays, Transistors - FETs, MOSFETs - RF, Transistors - Bipolè (BJT) - RF, Tiristors - SCR - Modil yo, Transistors - JFETs and Tiristors - TRIACs ...
Avantaj konpetitif:
We specialize in Toshiba Semiconductor and Storage SSM6J414TU,LF electronic components. SSM6J414TU,LF can be shipped within 24 hours after order. If you have any demands for SSM6J414TU,LF, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SSM6J414TU,LF Atribi pwodwi yo

Nimewo Pati : SSM6J414TU,LF
Manifakti : Toshiba Semiconductor and Storage
Deskripsyon : MOSFET P CH 20V 6A UF6
Seri : U-MOSVI
Estati Pati : Active
FET Kalite : P-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 20V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 6A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 1.5V, 4.5V
RD sou (Max) @ Id, Vgs : 22.5 mOhm @ 6A, 4.5V
Vgs (th) (Max) @ Id : 1V @ 1mA
Chaje Gate (Qg) (Max) @ Vgs : 23.1nC @ 4.5V
Vgs (Max) : ±8V
Antre kapasite (Ciss) (Max) @ Vds : 1650pF @ 10V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 1W (Ta)
Operating Tanperati : 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : UF6
Pake / Ka : 6-SMD, Flat Leads