Nimewo Pati :
TPC8408,LQ(S
Manifakti :
Toshiba Semiconductor and Storage
Deskripsyon :
MOSFET N/P-CH 40V 6.1A/5.3A 8SOP
FET Kalite :
N and P-Channel
Karakteristik FET :
Logic Level Gate
Drenaj nan Voltage Sous (Vdss) :
40V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
6.1A, 5.3A
RD sou (Max) @ Id, Vgs :
32 mOhm @ 3.1A, 10V
Vgs (th) (Max) @ Id :
2.3V @ 100µA
Chaje Gate (Qg) (Max) @ Vgs :
24nC @ 10V
Antre kapasite (Ciss) (Max) @ Vds :
850pF @ 10V
Operating Tanperati :
150°C (TJ)
Mounting Kalite :
Surface Mount
Pake / Ka :
8-SOIC (0.154", 3.90mm Width)
Pake Aparèy Founisè :
8-SOP