Nimewo Pati :
TSM4NB60CH C5G
Manifakti :
Taiwan Semiconductor Corporation
Deskripsyon :
600V N CHANNEL MOSFET
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
600V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
4A
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
2.5 Ohm @ 2A, 10V
Vgs (th) (Max) @ Id :
4.5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
14.5nC @ 10V
Antre kapasite (Ciss) (Max) @ Vds :
500pF @ 25V
Disipasyon Pouvwa (Max) :
50W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
TO-251 (IPAK)
Pake / Ka :
TO-251-3 Short Leads, IPak, TO-251AA