SUP90330E-GE3 Pricing (USD) [48963PC Stock]
- 1 pcs$0.79857
- Nimewo Pati:
- SUP90330E-GE3
- Manifakti:
- Vishay Siliconix
- Detaye deskripsyon:
- MOSFET N-CH 200V 35.8A TO220AB.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Pwogramasyon Unijunction, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - FETs, MOSFETs - Single, Diodes - Zener - Arrays, Transistors - JFETs, Transistors - Bipolè (BJT) - RF, Diodes - Varyab kapasite (Varicaps, Varactors) and Transistors - Objektif espesyal ...
- Avantaj konpetitif:
- We specialize in Vishay Siliconix SUP90330E-GE3 electronic components. SUP90330E-GE3 can be shipped within 24 hours after order. If you have any demands for SUP90330E-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SUP90330E-GE3 Atribi pwodwi yo
Nimewo Pati :
SUP90330E-GE3
Manifakti :
Vishay Siliconix
Deskripsyon :
MOSFET N-CH 200V 35.8A TO220AB
Seri :
ThunderFET®
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
200V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
35.8A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
7.5V, 10V
RD sou (Max) @ Id, Vgs :
37.5 mOhm @ 12.2A, 10V
Vgs (th) (Max) @ Id :
4V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
32nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
1172pF @ 100V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
125W (Tc)
Operating Tanperati :
-55°C ~ 175°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
TO-220AB
Pake / Ka :
TO-220-3
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