Diodes Incorporated - DMTH10H015SPS-13

KEY Part #: K6396321

DMTH10H015SPS-13 Pricing (USD) [175761PC Stock]

  • 1 pcs$0.21044

Nimewo Pati:
DMTH10H015SPS-13
Manifakti:
Diodes Incorporated
Detaye deskripsyon:
MOSFET BVDSS 61V-100V POWERDI50.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - RF, Transistors - Pwogramasyon Unijunction, Transistors - IGBTs - Arrays, Transistors - Bipolè (BJT) - Single, Tiristors - SCR, Tiristors - TRIACs, Diodes - Varyab kapasite (Varicaps, Varactors) and Transistors - FETs, MOSFETs - Arrays ...
Avantaj konpetitif:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

DMTH10H015SPS-13 Atribi pwodwi yo

Nimewo Pati : DMTH10H015SPS-13
Manifakti : Diodes Incorporated
Deskripsyon : MOSFET BVDSS 61V-100V POWERDI50
Seri : Automotive, AEC-Q101
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 100V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 8.4A (Ta), 50.5A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 6V, 10V
RD sou (Max) @ Id, Vgs : 14.5 mOhm @ 20A, 10V
Vgs (th) (Max) @ Id : 4V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 30.1nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 2343pF @ 50V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 1.5W (Ta), 55W (Tc)
Operating Tanperati : -55°C ~ 175°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : PowerDI5060-8
Pake / Ka : 8-PowerTDFN