Infineon Technologies - IRF1010EL

KEY Part #: K6414608

[12696PC Stock]


    Nimewo Pati:
    IRF1010EL
    Manifakti:
    Infineon Technologies
    Detaye deskripsyon:
    MOSFET N-CH 60V 84A TO-262.
    Manufacturer's standard lead time:
    Nan stok
    Lavi etajè:
    Yon ane
    Chip Soti nan:
    Hong Kong
    RoHS:
    Metòd peman:
    Chemen chajman:
    Kategori Fanmi yo:
    KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Single, Diodes - Zener - Single, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - FETs, MOSFETs - Arrays, Transistors - Bipolè (BJT) - Arrays, Diodes - Zener - Arrays, Transistors - FETs, MOSFETs - RF and Transistors - Bipolè (BJT) - RF ...
    Avantaj konpetitif:
    We specialize in Infineon Technologies IRF1010EL electronic components. IRF1010EL can be shipped within 24 hours after order. If you have any demands for IRF1010EL, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    IRF1010EL Atribi pwodwi yo

    Nimewo Pati : IRF1010EL
    Manifakti : Infineon Technologies
    Deskripsyon : MOSFET N-CH 60V 84A TO-262
    Seri : HEXFET®
    Estati Pati : Obsolete
    FET Kalite : N-Channel
    Teknoloji : MOSFET (Metal Oxide)
    Drenaj nan Voltage Sous (Vdss) : 60V
    Kouran - Drenaj Kontinye (Id) @ 25 ° C : 84A (Tc)
    Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
    RD sou (Max) @ Id, Vgs : 12 mOhm @ 50A, 10V
    Vgs (th) (Max) @ Id : 4V @ 250µA
    Chaje Gate (Qg) (Max) @ Vgs : 130nC @ 10V
    Vgs (Max) : ±20V
    Antre kapasite (Ciss) (Max) @ Vds : 3210pF @ 25V
    Karakteristik FET : -
    Disipasyon Pouvwa (Max) : 200W (Tc)
    Operating Tanperati : -55°C ~ 175°C (TJ)
    Mounting Kalite : Through Hole
    Pake Aparèy Founisè : TO-262
    Pake / Ka : TO-262-3 Long Leads, I²Pak, TO-262AA

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