DMJ70H1D3SJ3 Pricing (USD) [98319PC Stock]
- 1 pcs$0.39770
- 75 pcs$0.37345
- Nimewo Pati:
- DMJ70H1D3SJ3
- Manifakti:
- Diodes Incorporated
- Detaye deskripsyon:
- MOSFET N-CH TO251.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - RF, Transistors - FETs, MOSFETs - Arrays, Transistors - IGBTs - Single, Transistors - JFETs, Transistors - Pwogramasyon Unijunction, Diodes - Varyab kapasite (Varicaps, Varactors), Modil pouvwa chofè and Diodes - Rèkteur - Single ...
- Avantaj konpetitif:
- We specialize in Diodes Incorporated DMJ70H1D3SJ3 electronic components. DMJ70H1D3SJ3 can be shipped within 24 hours after order. If you have any demands for DMJ70H1D3SJ3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
DMJ70H1D3SJ3 Atribi pwodwi yo
Nimewo Pati :
DMJ70H1D3SJ3
Manifakti :
Diodes Incorporated
Deskripsyon :
MOSFET N-CH TO251
Seri :
-
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
700V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
4.6A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
-
RD sou (Max) @ Id, Vgs :
1.3 Ohm @ 2.5A, 10V
Vgs (th) (Max) @ Id :
4V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
13.9nC @ 10V
Vgs (Max) :
-
Antre kapasite (Ciss) (Max) @ Vds :
351pF @ 50V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
41W (Tc)
Operating Tanperati :
-55°C ~ 155°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
TO-251
Pake / Ka :
TO-251-3 Short Leads, IPak, TO-251AA
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