STH170N8F7-2 Pricing (USD) [57139PC Stock]
- 1 pcs$0.68431
- 1,000 pcs$0.60503
- 2,000 pcs$0.56331
- 5,000 pcs$0.54244
- Nimewo Pati:
- STH170N8F7-2
- Manifakti:
- STMicroelectronics
- Detaye deskripsyon:
- MOSFET N-CH 80V 120A.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - IGBTs - Modil yo, Transistors - Bipolè (BJT) - Arrays, Diodes - Rèkteur - Single, Diodes - RF, Diodes - Zener - Arrays, Tiristors - SCR, Transistors - FETs, MOSFETs - RF and Transistors - Bipolè (BJT) - Single ...
- Avantaj konpetitif:
- We specialize in STMicroelectronics STH170N8F7-2 electronic components. STH170N8F7-2 can be shipped within 24 hours after order. If you have any demands for STH170N8F7-2, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
STH170N8F7-2 Atribi pwodwi yo
Nimewo Pati :
STH170N8F7-2
Manifakti :
STMicroelectronics
Deskripsyon :
MOSFET N-CH 80V 120A
Seri :
STripFET™ F7
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
80V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
120A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
3.7 mOhm @ 60A, 10V
Vgs (th) (Max) @ Id :
4.5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
120nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
8710pF @ 40V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
250W (Tc)
Operating Tanperati :
-55°C ~ 175°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
H2Pak-2
Pake / Ka :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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