[3047PC Stock]
- Nimewo Pati:
- IPS050N03LGBKMA1
- Manifakti:
- Infineon Technologies
- Detaye deskripsyon:
- MOSFET N-CHANNEL 30V 50A TO251-3.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - IGBTs - Arrays, Tiristors - TRIACs, Transistors - IGBTs - Modil yo, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - Bipolè (BJT) - Arrays, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Diodes - Zener - Single and Modil pouvwa chofè ...
- Avantaj konpetitif:
- We specialize in Infineon Technologies IPS050N03LGBKMA1 electronic components. IPS050N03LGBKMA1 can be shipped within 24 hours after order. If you have any demands for IPS050N03LGBKMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IPS050N03LGBKMA1 Atribi pwodwi yo
Nimewo Pati :
IPS050N03LGBKMA1
Manifakti :
Infineon Technologies
Deskripsyon :
MOSFET N-CHANNEL 30V 50A TO251-3
Seri :
OptiMOS™
Estati Pati :
Obsolete
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
30V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
50A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
4.5V, 10V
RD sou (Max) @ Id, Vgs :
5 mOhm @ 30A, 10V
Vgs (th) (Max) @ Id :
2.2V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
31nC @ 10V
Vgs (Max) :
-
Antre kapasite (Ciss) (Max) @ Vds :
3200pF @ 15V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
68W (Tc)
Operating Tanperati :
-55°C ~ 175°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
PG-TO251-3
Pake / Ka :
TO-251-3 Stub Leads, IPak
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