ZXMN6A09KQTC Pricing (USD) [111004PC Stock]
- 1 pcs$0.33321
- 2,500 pcs$0.29366
- Nimewo Pati:
- ZXMN6A09KQTC
- Manifakti:
- Diodes Incorporated
- Detaye deskripsyon:
- MOSFET N-CH 60V 11.8A TO252.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tranzistò - Bipolè (BJT) - Single, Pre-partial, Tiristors - TRIACs, Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - IGBTs - Modil yo, Modil pouvwa chofè, Transistors - JFETs, Tiristors - SCR - Modil yo and Transistors - Bipolè (BJT) - RF ...
- Avantaj konpetitif:
- We specialize in Diodes Incorporated ZXMN6A09KQTC electronic components. ZXMN6A09KQTC can be shipped within 24 hours after order. If you have any demands for ZXMN6A09KQTC, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
ZXMN6A09KQTC Atribi pwodwi yo
Nimewo Pati :
ZXMN6A09KQTC
Manifakti :
Diodes Incorporated
Deskripsyon :
MOSFET N-CH 60V 11.8A TO252
Seri :
Automotive, AEC-Q101
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
60V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
11.8A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
4.5V, 10V
RD sou (Max) @ Id, Vgs :
40 mOhm @ 7.3A, 10V
Vgs (th) (Max) @ Id :
3V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
29nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
1426pF @ 30V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
10.1W (Ta)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
TO-252, (D-Pak)
Pake / Ka :
TO-252-3, DPak (2 Leads + Tab), SC-63
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