IXYS - IXFP7N100P

KEY Part #: K6394557

IXFP7N100P Pricing (USD) [24740PC Stock]

  • 1 pcs$1.92530
  • 50 pcs$1.91572

Nimewo Pati:
IXFP7N100P
Manifakti:
IXYS
Detaye deskripsyon:
MOSFET N-CH 1000V 7A TO-220.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - IGBTs - Modil yo, Diodes - Rèkteur - Single, Tiristors - TRIACs, Tiristors - SCR - Modil yo, Transistors - JFETs, Diodes - Zener - Arrays, Transistors - Objektif espesyal and Diodes - Bridge rèktifikateur ...
Avantaj konpetitif:
We specialize in IXYS IXFP7N100P electronic components. IXFP7N100P can be shipped within 24 hours after order. If you have any demands for IXFP7N100P, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IXFP7N100P Atribi pwodwi yo

Nimewo Pati : IXFP7N100P
Manifakti : IXYS
Deskripsyon : MOSFET N-CH 1000V 7A TO-220
Seri : HiPerFET™, PolarP2™
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 1000V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 7A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 1.9 Ohm @ 3.5A, 10V
Vgs (th) (Max) @ Id : 6V @ 1mA
Chaje Gate (Qg) (Max) @ Vgs : 47nC @ 10V
Vgs (Max) : ±30V
Antre kapasite (Ciss) (Max) @ Vds : 2590pF @ 25V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 300W (Tc)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Through Hole
Pake Aparèy Founisè : TO-220AB
Pake / Ka : TO-220-3