[12977PC Stock]
- Nimewo Pati:
- IRF9Z34NLPBF
- Manifakti:
- Infineon Technologies
- Detaye deskripsyon:
- MOSFET P-CH 55V 19A TO-262.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - RF, Transistors - IGBTs - Modil yo, Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - Objektif espesyal, Tiristors - SCR, Tiristors - DIACs, SIDACs, Tranzistò - Bipolè (BJT) - Single, Pre-partial and Modil pouvwa chofè ...
- Avantaj konpetitif:
- We specialize in Infineon Technologies IRF9Z34NLPBF electronic components. IRF9Z34NLPBF can be shipped within 24 hours after order. If you have any demands for IRF9Z34NLPBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRF9Z34NLPBF Atribi pwodwi yo
Nimewo Pati :
IRF9Z34NLPBF
Manifakti :
Infineon Technologies
Deskripsyon :
MOSFET P-CH 55V 19A TO-262
Seri :
HEXFET®
Estati Pati :
Obsolete
FET Kalite :
P-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
55V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
19A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
100 mOhm @ 10A, 10V
Vgs (th) (Max) @ Id :
4V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
35nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
620pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
3.8W (Ta), 68W (Tc)
Operating Tanperati :
-55°C ~ 175°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
TO-262
Pake / Ka :
TO-262-3 Long Leads, I²Pak, TO-262AA
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