[12851PC Stock]
- Nimewo Pati:
- IRFSL31N20DTRR
- Manifakti:
- Vishay Siliconix
- Detaye deskripsyon:
- MOSFET N-CH 200V 31A TO-262.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Single, Tiristors - TRIACs, Diodes - RF, Tiristors - DIACs, SIDACs, Transistors - FETs, MOSFETs - Arrays, Transistors - IGBTs - Single, Diodes - Zener - Arrays and Tiristors - SCR - Modil yo ...
- Avantaj konpetitif:
- We specialize in Vishay Siliconix IRFSL31N20DTRR electronic components. IRFSL31N20DTRR can be shipped within 24 hours after order. If you have any demands for IRFSL31N20DTRR, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRFSL31N20DTRR Atribi pwodwi yo
Nimewo Pati :
IRFSL31N20DTRR
Manifakti :
Vishay Siliconix
Deskripsyon :
MOSFET N-CH 200V 31A TO-262
Seri :
-
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
200V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
31A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
82 mOhm @ 18A, 10V
Vgs (th) (Max) @ Id :
5.5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
110nC @ 10V
Vgs (Max) :
±30V
Antre kapasite (Ciss) (Max) @ Vds :
2370pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
3.1W (Ta), 200W (Tc)
Operating Tanperati :
-55°C ~ 175°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
I2PAK
Pake / Ka :
TO-262-3 Long Leads, I²Pak, TO-262AA
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