Nimewo Pati :
RS1G120MNTB
Manifakti :
Rohm Semiconductor
Deskripsyon :
MOSFET N-CH 40V 12A 8HSOP
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
40V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
12A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
4.5V, 10V
RD sou (Max) @ Id, Vgs :
16.2 mOhm @ 12A, 10V
Vgs (th) (Max) @ Id :
2.5V @ 1mA
Chaje Gate (Qg) (Max) @ Vgs :
9.4nC @ 10V
Antre kapasite (Ciss) (Max) @ Vds :
570pF @ 20V
Disipasyon Pouvwa (Max) :
3W (Ta), 25W (Tc)
Operating Tanperati :
150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
8-HSOP