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Si kote ou pa nan lis la, tanpri chwazi youn nan sa ki annapre yo:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. Lakay
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  3. Disrè Semiconductor Pwodwi yo
  4. Transistors - FETs, MOSFETs - Single
  5. VP2206N3-G-P003

Microchip Technology - VP2206N3-G-P003

KEY Part #: K6392765

VP2206N3-G-P003 Pricing (USD) [60530PC Stock]

  • 1 pcs$0.66180
  • 2,000 pcs$0.65851
Nimewo Pati:
VP2206N3-G-P003
Manifakti:
Microchip Technology
Detaye deskripsyon:
MOSFET P-CH 60V 640MA TO92-3.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - FETs, MOSFETs - Arrays, Modil pouvwa chofè, Transistors - Bipolè (BJT) - Single, Transistors - Bipolè (BJT) - Arrays, Tiristors - SCR - Modil yo, Transistors - FETs, MOSFETs - RF, Diodes - Zener - Arrays and Diodes - Bridge rèktifikateur ...
Avantaj konpetitif:
We specialize in Microchip Technology VP2206N3-G-P003 electronic components. VP2206N3-G-P003 can be shipped within 24 hours after order. If you have any demands for VP2206N3-G-P003, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

VP2206N3-G-P003 Atribi pwodwi yo

Nimewo Pati : VP2206N3-G-P003
Manifakti : Microchip Technology
Deskripsyon : MOSFET P-CH 60V 640MA TO92-3
Seri : -
Estati Pati : Active
FET Kalite : P-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 60V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 640mA (Tj)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 5V, 10V
RD sou (Max) @ Id, Vgs : 900 mOhm @ 3.5A, 10V
Vgs (th) (Max) @ Id : 3.5V @ 10mA
Chaje Gate (Qg) (Max) @ Vgs : -
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 450pF @ 25V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 740mW (Tc)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Through Hole
Pake Aparèy Founisè : TO-92-3
Pake / Ka : TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
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