Diodes Incorporated - DMPH1006UPSQ-13

KEY Part #: K6403358

DMPH1006UPSQ-13 Pricing (USD) [170140PC Stock]

  • 1 pcs$0.21739
  • 2,500 pcs$0.19241

Nimewo Pati:
DMPH1006UPSQ-13
Manifakti:
Diodes Incorporated
Detaye deskripsyon:
MOSFET P-CH 12V 80A POWERDI5060.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - RF, Tiristors - SCR - Modil yo, Transistors - Objektif espesyal, Diodes - Rèkteur - Arrays, Diodes - Zener - Single, Transistors - FETs, MOSFETs - RF, Diodes - Varyab kapasite (Varicaps, Varactors) and Transistors - Bipolè (BJT) - Single ...
Avantaj konpetitif:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

DMPH1006UPSQ-13 Atribi pwodwi yo

Nimewo Pati : DMPH1006UPSQ-13
Manifakti : Diodes Incorporated
Deskripsyon : MOSFET P-CH 12V 80A POWERDI5060
Seri : Automotive, AEC-Q101
Estati Pati : Active
FET Kalite : P-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 12V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 80A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 2.5V, 4.5V
RD sou (Max) @ Id, Vgs : 6 mOhm @ 15A, 4.5V
Vgs (th) (Max) @ Id : 1V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 124nC @ 8V
Vgs (Max) : ±8V
Antre kapasite (Ciss) (Max) @ Vds : 6334pF @ 10V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 3.2W
Operating Tanperati : -55°C ~ 175°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : PowerDI5060-8
Pake / Ka : 8-PowerTDFN