IXFP56N30X3M Pricing (USD) [14212PC Stock]
- 1 pcs$2.89981
- Nimewo Pati:
- IXFP56N30X3M
- Manifakti:
- IXYS
- Detaye deskripsyon:
- FET N-CHANNEL.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Pwogramasyon Unijunction, Transistors - Bipolè (BJT) - Single, Tiristors - SCR, Modil pouvwa chofè, Transistors - IGBTs - Arrays, Transistors - FETs, MOSFETs - Single, Transistors - Bipolè (BJT) - Arrays, Pre-partial and Tiristors - SCR - Modil yo ...
- Avantaj konpetitif:
- We specialize in IXYS IXFP56N30X3M electronic components. IXFP56N30X3M can be shipped within 24 hours after order. If you have any demands for IXFP56N30X3M, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXFP56N30X3M Atribi pwodwi yo
Nimewo Pati :
IXFP56N30X3M
Manifakti :
IXYS
Deskripsyon :
FET N-CHANNEL
Seri :
HiPerFET™
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
300V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
56A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
27 mOhm @ 28A, 10V
Vgs (th) (Max) @ Id :
4.5V @ 1.5mA
Chaje Gate (Qg) (Max) @ Vgs :
56nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
3750pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
36W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
TO-220 Isolated Tab
Pake / Ka :
TO-220-3 Full Pack, Isolated Tab
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