Infineon Technologies - BSL606SNH6327XTSA1

KEY Part #: K6421183

BSL606SNH6327XTSA1 Pricing (USD) [381438PC Stock]

  • 1 pcs$0.09697
  • 3,000 pcs$0.07674

Nimewo Pati:
BSL606SNH6327XTSA1
Manifakti:
Infineon Technologies
Detaye deskripsyon:
MOSFET N-CH 60V 4.5A 6TSOP.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Zener - Single, Diodes - RF, Transistors - Objektif espesyal, Diodes - Bridge rèktifikateur, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - FETs, MOSFETs - RF, Transistors - Bipolè (BJT) - Single and Transistors - JFETs ...
Avantaj konpetitif:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

BSL606SNH6327XTSA1 Atribi pwodwi yo

Nimewo Pati : BSL606SNH6327XTSA1
Manifakti : Infineon Technologies
Deskripsyon : MOSFET N-CH 60V 4.5A 6TSOP
Seri : Automotive, AEC-Q101, OptiMOS™
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 60V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 4.5A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 4.5V, 10V
RD sou (Max) @ Id, Vgs : 60 mOhm @ 4.5A, 10V
Vgs (th) (Max) @ Id : 2.3V @ 15µA
Chaje Gate (Qg) (Max) @ Vgs : 5.6nC @ 5V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 657pF @ 25V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 2W (Ta)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : PG-TSOP-6-6
Pake / Ka : SOT-23-6 Thin, TSOT-23-6