STMicroelectronics - STW8NB100

KEY Part #: K6414349

[8378PC Stock]


    Nimewo Pati:
    STW8NB100
    Manifakti:
    STMicroelectronics
    Detaye deskripsyon:
    MOSFET N-CH 1KV 7.3A TO-247.
    Manufacturer's standard lead time:
    Nan stok
    Lavi etajè:
    Yon ane
    Chip Soti nan:
    Hong Kong
    RoHS:
    Metòd peman:
    Chemen chajman:
    Kategori Fanmi yo:
    KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Bridge rèktifikateur, Tiristors - SCR - Modil yo, Tiristors - SCR, Diodes - Rèkteur - Single, Diodes - Zener - Single, Transistors - IGBTs - Arrays, Transistors - Bipolè (BJT) - Arrays and Transistors - IGBTs - Single ...
    Avantaj konpetitif:
    We specialize in STMicroelectronics STW8NB100 electronic components. STW8NB100 can be shipped within 24 hours after order. If you have any demands for STW8NB100, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    STW8NB100 Atribi pwodwi yo

    Nimewo Pati : STW8NB100
    Manifakti : STMicroelectronics
    Deskripsyon : MOSFET N-CH 1KV 7.3A TO-247
    Seri : PowerMESH™
    Estati Pati : Obsolete
    FET Kalite : N-Channel
    Teknoloji : MOSFET (Metal Oxide)
    Drenaj nan Voltage Sous (Vdss) : 1000V
    Kouran - Drenaj Kontinye (Id) @ 25 ° C : 7.3A (Tc)
    Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
    RD sou (Max) @ Id, Vgs : 1.45 Ohm @ 3.6A, 10V
    Vgs (th) (Max) @ Id : 5V @ 250µA
    Chaje Gate (Qg) (Max) @ Vgs : 95nC @ 10V
    Vgs (Max) : ±30V
    Antre kapasite (Ciss) (Max) @ Vds : 2900pF @ 25V
    Karakteristik FET : -
    Disipasyon Pouvwa (Max) : 190W (Tc)
    Operating Tanperati : 150°C (TJ)
    Mounting Kalite : Through Hole
    Pake Aparèy Founisè : TO-247-3
    Pake / Ka : TO-247-3

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