Nimewo Pati :
TPH4R10ANL,L1Q
Manifakti :
Toshiba Semiconductor and Storage
Deskripsyon :
X35 PB-F POWER MOSFET TRANSISTOR
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
100V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
92A (Ta), 70A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
4.5V, 10V
RD sou (Max) @ Id, Vgs :
4.1 mOhm @ 35A, 10V
Vgs (th) (Max) @ Id :
2.5V @ 1mA
Chaje Gate (Qg) (Max) @ Vgs :
75nC @ 10V
Antre kapasite (Ciss) (Max) @ Vds :
6.3nF @ 50V
Disipasyon Pouvwa (Max) :
2.5W (Ta), 67W (Tc)
Operating Tanperati :
150°C
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
8-SOP Advance (5x5)