[1035PC Stock]
- Nimewo Pati:
- IPB80N06S2L06ATMA1
- Manifakti:
- Infineon Technologies
- Detaye deskripsyon:
- MOSFET N-CH 55V 80A TO263-3.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - FETs, MOSFETs - Arrays, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Tiristors - SCR, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Diodes - Zener - Single, Diodes - Rèkteur - Arrays and Tiristors - TRIACs ...
- Avantaj konpetitif:
- We specialize in Infineon Technologies IPB80N06S2L06ATMA1 electronic components. IPB80N06S2L06ATMA1 can be shipped within 24 hours after order. If you have any demands for IPB80N06S2L06ATMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IPB80N06S2L06ATMA1 Atribi pwodwi yo
Nimewo Pati :
IPB80N06S2L06ATMA1
Manifakti :
Infineon Technologies
Deskripsyon :
MOSFET N-CH 55V 80A TO263-3
Seri :
OptiMOS™
Estati Pati :
Discontinued at Digi-Key
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
55V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
80A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
4.5V, 10V
RD sou (Max) @ Id, Vgs :
6 mOhm @ 69A, 10V
Vgs (th) (Max) @ Id :
2V @ 180µA
Chaje Gate (Qg) (Max) @ Vgs :
150nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
3800pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
250W (Tc)
Operating Tanperati :
-55°C ~ 175°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
PG-TO263-3-2
Pake / Ka :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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