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Si kote ou pa nan lis la, tanpri chwazi youn nan sa ki annapre yo:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. Lakay
  2. Pwodwi yo
  3. Disrè Semiconductor Pwodwi yo
  4. Transistors - FETs, MOSFETs - Single
  5. PSMN1R1-30EL,127

Nexperia USA Inc. - PSMN1R1-30EL,127

KEY Part #: K6408428

PSMN1R1-30EL,127 Pricing (USD) [33519PC Stock]

  • 1 pcs$1.22955
  • 10 pcs$1.05236
  • 100 pcs$0.84565
  • 500 pcs$0.65772
  • 1,000 pcs$0.54496
Nimewo Pati:
PSMN1R1-30EL,127
Manifakti:
Nexperia USA Inc.
Detaye deskripsyon:
MOSFET N-CH 30V 120A I2PAK.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - RF, Transistors - Objektif espesyal, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Diodes - Rèkteur - Single, Transistors - Bipolè (BJT) - Arrays, Transistors - JFETs, Transistors - Bipolè (BJT) - RF and Tiristors - TRIACs ...
Avantaj konpetitif:
We specialize in Nexperia USA Inc. PSMN1R1-30EL,127 electronic components. PSMN1R1-30EL,127 can be shipped within 24 hours after order. If you have any demands for PSMN1R1-30EL,127, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

PSMN1R1-30EL,127 Atribi pwodwi yo

Nimewo Pati : PSMN1R1-30EL,127
Manifakti : Nexperia USA Inc.
Deskripsyon : MOSFET N-CH 30V 120A I2PAK
Seri : -
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 30V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 120A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 4.5V, 10V
RD sou (Max) @ Id, Vgs : 1.3 mOhm @ 25A, 10V
Vgs (th) (Max) @ Id : 2.2V @ 1mA
Chaje Gate (Qg) (Max) @ Vgs : 243nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 14850pF @ 15V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 338W (Tc)
Operating Tanperati : -55°C ~ 175°C (TJ)
Mounting Kalite : Through Hole
Pake Aparèy Founisè : I2PAK
Pake / Ka : TO-262-3 Long Leads, I²Pak, TO-262AA

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