PML260SN,118 Pricing (USD) [12169PC Stock]
- 1,400 pcs$0.20230
- Nimewo Pati:
- PML260SN,118
- Manifakti:
- Nexperia USA Inc.
- Detaye deskripsyon:
- MOSFET N-CH 200V 8.8A 8HVSON.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Pwogramasyon Unijunction, Tiristors - SCR, Transistors - Bipolè (BJT) - Arrays, Transistors - IGBTs - Single, Transistors - IGBTs - Modil yo, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - JFETs and Diodes - RF ...
- Avantaj konpetitif:
- We specialize in Nexperia USA Inc. PML260SN,118 electronic components. PML260SN,118 can be shipped within 24 hours after order. If you have any demands for PML260SN,118, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
PML260SN,118 Atribi pwodwi yo
Nimewo Pati :
PML260SN,118
Manifakti :
Nexperia USA Inc.
Deskripsyon :
MOSFET N-CH 200V 8.8A 8HVSON
Seri :
TrenchMOS™
Estati Pati :
Obsolete
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
200V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
8.8A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
6V, 10V
RD sou (Max) @ Id, Vgs :
294 mOhm @ 2.6A, 10V
Vgs (th) (Max) @ Id :
4V @ 1mA
Chaje Gate (Qg) (Max) @ Vgs :
13.3nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
657pF @ 30V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
50W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
DFN3333-8
Pake / Ka :
8-VDFN Exposed Pad
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