DMN61D8LVT-13 Pricing (USD) [520661PC Stock]
- 1 pcs$0.07104
- 10,000 pcs$0.06261
- Nimewo Pati:
- DMN61D8LVT-13
- Manifakti:
- Diodes Incorporated
- Detaye deskripsyon:
- MOSFET 2N-CH 60V 0.63A TSOT26.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Arrays, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Tiristors - SCR - Modil yo, Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - Bipolè (BJT) - Single, Diodes - Zener - Arrays, Tiristors - DIACs, SIDACs and Diodes - RF ...
- Avantaj konpetitif:
- We specialize in Diodes Incorporated DMN61D8LVT-13 electronic components. DMN61D8LVT-13 can be shipped within 24 hours after order. If you have any demands for DMN61D8LVT-13, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
DMN61D8LVT-13 Atribi pwodwi yo
Nimewo Pati :
DMN61D8LVT-13
Manifakti :
Diodes Incorporated
Deskripsyon :
MOSFET 2N-CH 60V 0.63A TSOT26
Seri :
-
Estati Pati :
Active
FET Kalite :
2 N-Channel (Dual)
Karakteristik FET :
Logic Level Gate
Drenaj nan Voltage Sous (Vdss) :
60V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
630mA
RD sou (Max) @ Id, Vgs :
1.8 Ohm @ 150mA, 5V
Vgs (th) (Max) @ Id :
2V @ 1mA
Chaje Gate (Qg) (Max) @ Vgs :
0.74nC @ 5V
Antre kapasite (Ciss) (Max) @ Vds :
12.9pF @ 12V
Pouvwa - Max :
820mW
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake / Ka :
SOT-23-6 Thin, TSOT-23-6
Pake Aparèy Founisè :
TSOT-26
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