Infineon Technologies - IPN70R2K1CEATMA1

KEY Part #: K6421207

IPN70R2K1CEATMA1 Pricing (USD) [393193PC Stock]

  • 1 pcs$0.09407
  • 3,000 pcs$0.08631

Nimewo Pati:
IPN70R2K1CEATMA1
Manifakti:
Infineon Technologies
Detaye deskripsyon:
MOSFET N-CHANNEL 750V 4A SOT223.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
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Avantaj konpetitif:
We specialize in Infineon Technologies IPN70R2K1CEATMA1 electronic components. IPN70R2K1CEATMA1 can be shipped within 24 hours after order. If you have any demands for IPN70R2K1CEATMA1, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IPN70R2K1CEATMA1 Atribi pwodwi yo

Nimewo Pati : IPN70R2K1CEATMA1
Manifakti : Infineon Technologies
Deskripsyon : MOSFET N-CHANNEL 750V 4A SOT223
Seri : -
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 750V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 4A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 2.1 Ohm @ 1A, 10V
Vgs (th) (Max) @ Id : 3.5V @ 70µA
Chaje Gate (Qg) (Max) @ Vgs : 7.8nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 163pF @ 100V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 5W (Tc)
Operating Tanperati : -40°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : PG-SOT223
Pake / Ka : SOT-223-3

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