Infineon Technologies - IPD60R650CEBTMA1

KEY Part #: K6402170

IPD60R650CEBTMA1 Pricing (USD) [2797PC Stock]

  • 2,500 pcs$0.13752

Nimewo Pati:
IPD60R650CEBTMA1
Manifakti:
Infineon Technologies
Detaye deskripsyon:
MOSFET N-CH 600V 7A TO252.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Zener - Arrays, Diodes - Zener - Single, Transistors - Pwogramasyon Unijunction, Transistors - Bipolè (BJT) - Single, Transistors - IGBTs - Arrays, Transistors - IGBTs - Modil yo, Diodes - Rèkteur - Arrays and Transistors - Bipolè (BJT) - Arrays ...
Avantaj konpetitif:
We specialize in Infineon Technologies IPD60R650CEBTMA1 electronic components. IPD60R650CEBTMA1 can be shipped within 24 hours after order. If you have any demands for IPD60R650CEBTMA1, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IPD60R650CEBTMA1 Atribi pwodwi yo

Nimewo Pati : IPD60R650CEBTMA1
Manifakti : Infineon Technologies
Deskripsyon : MOSFET N-CH 600V 7A TO252
Seri : CoolMOS™ CE
Estati Pati : Discontinued at Digi-Key
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 600V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 7A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 650 mOhm @ 2.4A, 10V
Vgs (th) (Max) @ Id : 3.5V @ 200µA
Chaje Gate (Qg) (Max) @ Vgs : 20.5nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 440pF @ 100V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 82W (Tc)
Operating Tanperati : -40°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : PG-TO252-3
Pake / Ka : TO-252-3, DPak (2 Leads + Tab), SC-63

Ou ka enterese tou
  • ZVN2106ASTZ

    Diodes Incorporated

    MOSFET N-CH 60V 0.45A TO92-3.

  • LND150N3-G-P003

    Microchip Technology

    MOSFET N-CH 500V 30MA TO92-3.

  • ZVN2110ASTZ

    Diodes Incorporated

    MOSFET N-CH 100V 320MA TO92-3.

  • ZVP2110ASTZ

    Diodes Incorporated

    MOSFET P-CH 100V 0.23A TO92-3.

  • BS170-D26Z

    ON Semiconductor

    MOSFET N-CH 60V 500MA TO-92.

  • TK90S06N1L,LQ

    Toshiba Semiconductor and Storage

    MOSFET N-CH 60V 90A DPAK.