Nimewo Pati :
TPN2R805PL,L1Q
Manifakti :
Toshiba Semiconductor and Storage
Deskripsyon :
X35 PB-F POWER MOSFET TRANSISTOR
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
45V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
139A (Ta), 80A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
4.5V, 10V
RD sou (Max) @ Id, Vgs :
2.8 mOhm @ 40A, 10V
Vgs (th) (Max) @ Id :
2.4V @ 300µA
Chaje Gate (Qg) (Max) @ Vgs :
39nC @ 10V
Antre kapasite (Ciss) (Max) @ Vds :
3.2nF @ 22.5V
Disipasyon Pouvwa (Max) :
2.67W (Ta), 104W (Tc)
Operating Tanperati :
175°C
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
8-TSON Advance (3.3x3.3)