IXYS - IXFH30N50P

KEY Part #: K6394545

IXFH30N50P Pricing (USD) [18102PC Stock]

  • 1 pcs$3.19507
  • 10 pcs$2.87380
  • 100 pcs$2.36272
  • 500 pcs$1.97958
  • 1,000 pcs$1.72415

Nimewo Pati:
IXFH30N50P
Manifakti:
IXYS
Detaye deskripsyon:
MOSFET N-CH 500V 30A TO-247AD.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - FETs, MOSFETs - RF, Tiristors - DIACs, SIDACs, Diodes - Zener - Arrays, Transistors - FETs, MOSFETs - Single, Transistors - IGBTs - Arrays, Transistors - Pwogramasyon Unijunction, Transistors - JFETs and Diodes - Bridge rèktifikateur ...
Avantaj konpetitif:
We specialize in IXYS IXFH30N50P electronic components. IXFH30N50P can be shipped within 24 hours after order. If you have any demands for IXFH30N50P, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IXFH30N50P Atribi pwodwi yo

Nimewo Pati : IXFH30N50P
Manifakti : IXYS
Deskripsyon : MOSFET N-CH 500V 30A TO-247AD
Seri : HiPerFET™, PolarHT™
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 500V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 30A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 200 mOhm @ 15A, 10V
Vgs (th) (Max) @ Id : 5V @ 4mA
Chaje Gate (Qg) (Max) @ Vgs : 70nC @ 10V
Vgs (Max) : ±30V
Antre kapasite (Ciss) (Max) @ Vds : 4150pF @ 25V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 460W (Tc)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Through Hole
Pake Aparèy Founisè : TO-247AD (IXFH)
Pake / Ka : TO-247-3