IXFP36N20X3 Pricing (USD) [29594PC Stock]
- 1 pcs$1.39261
- Nimewo Pati:
- IXFP36N20X3
- Manifakti:
- IXYS
- Detaye deskripsyon:
- 200V/36A ULTRA JUNCTION X3-CLASS.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Rèkteur - Arrays, Diodes - Rèkteur - Single, Tiristors - DIACs, SIDACs, Transistors - Bipolè (BJT) - RF, Diodes - RF, Transistors - Bipolè (BJT) - Arrays, Diodes - Zener - Arrays and Transistors - FETs, MOSFETs - Single ...
- Avantaj konpetitif:
- We specialize in IXYS IXFP36N20X3 electronic components. IXFP36N20X3 can be shipped within 24 hours after order. If you have any demands for IXFP36N20X3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXFP36N20X3 Atribi pwodwi yo
Nimewo Pati :
IXFP36N20X3
Manifakti :
IXYS
Deskripsyon :
200V/36A ULTRA JUNCTION X3-CLASS
Seri :
HiPerFET™
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
200V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
36A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
45 mOhm @ 18A, 10V
Vgs (th) (Max) @ Id :
4.5V @ 500µA
Chaje Gate (Qg) (Max) @ Vgs :
21nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
1425pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
176W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
TO-220
Pake / Ka :
TO-220-3
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