IXYS - IXFP36N20X3

KEY Part #: K6398030

IXFP36N20X3 Pricing (USD) [29594PC Stock]

  • 1 pcs$1.39261

Nimewo Pati:
IXFP36N20X3
Manifakti:
IXYS
Detaye deskripsyon:
200V/36A ULTRA JUNCTION X3-CLASS.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Objektif espesyal, Transistors - IGBTs - Arrays, Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - FETs, MOSFETs - Arrays, Modil pouvwa chofè, Diodes - RF, Transistors - JFETs and Tiristors - SCR - Modil yo ...
Avantaj konpetitif:
We specialize in IXYS IXFP36N20X3 electronic components. IXFP36N20X3 can be shipped within 24 hours after order. If you have any demands for IXFP36N20X3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IXFP36N20X3 Atribi pwodwi yo

Nimewo Pati : IXFP36N20X3
Manifakti : IXYS
Deskripsyon : 200V/36A ULTRA JUNCTION X3-CLASS
Seri : HiPerFET™
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 200V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 36A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 45 mOhm @ 18A, 10V
Vgs (th) (Max) @ Id : 4.5V @ 500µA
Chaje Gate (Qg) (Max) @ Vgs : 21nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 1425pF @ 25V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 176W (Tc)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Through Hole
Pake Aparèy Founisè : TO-220
Pake / Ka : TO-220-3

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