Nimewo Pati :
SSM6K211FE,LF
Manifakti :
Toshiba Semiconductor and Storage
Deskripsyon :
MOSFET N-CH 20V 3.2A ES6
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
20V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
3.2A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
1.5V, 4.5V
RD sou (Max) @ Id, Vgs :
47 mOhm @ 2A, 4.5V
Vgs (th) (Max) @ Id :
1V @ 1mA
Chaje Gate (Qg) (Max) @ Vgs :
10.8nC @ 4.5V
Antre kapasite (Ciss) (Max) @ Vds :
510pF @ 10V
Disipasyon Pouvwa (Max) :
500mW (Ta)
Operating Tanperati :
150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
ES6
Pake / Ka :
SOT-563, SOT-666