EPC2106ENGRT Pricing (USD) [119287PC Stock]
- 1 pcs$0.33054
- 2,500 pcs$0.32890
- Nimewo Pati:
- EPC2106ENGRT
- Manifakti:
- EPC
- Detaye deskripsyon:
- GAN TRANS 2N-CH 100V BUMPED DIE.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - SCR - Modil yo, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - Bipolè (BJT) - Single, Diodes - Rèkteur - Single, Transistors - FETs, MOSFETs - Arrays, Tiristors - SCR, Transistors - Pwogramasyon Unijunction and Transistors - JFETs ...
- Avantaj konpetitif:
- We specialize in EPC EPC2106ENGRT electronic components. EPC2106ENGRT can be shipped within 24 hours after order. If you have any demands for EPC2106ENGRT, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
EPC2106ENGRT Atribi pwodwi yo
Nimewo Pati :
EPC2106ENGRT
Manifakti :
EPC
Deskripsyon :
GAN TRANS 2N-CH 100V BUMPED DIE
Seri :
eGaN®
Estati Pati :
Active
FET Kalite :
2 N-Channel (Half Bridge)
Karakteristik FET :
GaNFET (Gallium Nitride)
Drenaj nan Voltage Sous (Vdss) :
100V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
1.7A
RD sou (Max) @ Id, Vgs :
70 mOhm @ 2A, 5V
Vgs (th) (Max) @ Id :
2.5V @ 600µA
Chaje Gate (Qg) (Max) @ Vgs :
0.73nC @ 5V
Antre kapasite (Ciss) (Max) @ Vds :
75pF @ 50V
Pouvwa - Max :
-
Operating Tanperati :
-40°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake / Ka :
Die
Pake Aparèy Founisè :
Die
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