Nimewo Pati :
SISS42DN-T1-GE3
Manifakti :
Vishay Siliconix
Deskripsyon :
MOSFET N-CHAN 100V POWERPAK 1212
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
100V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
11.8A (Ta), 40.5A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
7.5V, 10V
RD sou (Max) @ Id, Vgs :
14.4 mOhm @ 15A, 10V
Vgs (th) (Max) @ Id :
3.4V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
38nC @ 10V
Antre kapasite (Ciss) (Max) @ Vds :
1850pF @ 50V
Disipasyon Pouvwa (Max) :
4.8W (Ta), 57W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
PowerPAK® 1212-8S
Pake / Ka :
PowerPAK® 1212-8S