DMN3032LFDB-7 Pricing (USD) [533462PC Stock]
- 1 pcs$0.06934
- 3,000 pcs$0.06245
- Nimewo Pati:
- DMN3032LFDB-7
- Manifakti:
- Diodes Incorporated
- Detaye deskripsyon:
- MOSFET 2N-CH 30V 6.2A UDFN2020-6.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - RF, Transistors - Bipolè (BJT) - Arrays, Transistors - IGBTs - Modil yo, Transistors - IGBTs - Single, Transistors - Bipolè (BJT) - RF, Diodes - Zener - Arrays, Transistors - JFETs and Tranzistò - Bipolè (BJT) - Single, Pre-partial ...
- Avantaj konpetitif:
- We specialize in Diodes Incorporated DMN3032LFDB-7 electronic components. DMN3032LFDB-7 can be shipped within 24 hours after order. If you have any demands for DMN3032LFDB-7, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
DMN3032LFDB-7 Atribi pwodwi yo
Nimewo Pati :
DMN3032LFDB-7
Manifakti :
Diodes Incorporated
Deskripsyon :
MOSFET 2N-CH 30V 6.2A UDFN2020-6
Seri :
-
Estati Pati :
Active
FET Kalite :
2 N-Channel (Dual)
Karakteristik FET :
Standard
Drenaj nan Voltage Sous (Vdss) :
30V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
6.2A
RD sou (Max) @ Id, Vgs :
30 mOhm @ 5.8A, 10V
Vgs (th) (Max) @ Id :
2V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
10.6nC @ 10V
Antre kapasite (Ciss) (Max) @ Vds :
500pF @ 15V
Pouvwa - Max :
1W
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake / Ka :
6-UDFN Exposed Pad
Pake Aparèy Founisè :
U-DFN2020-6 (Type B)
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