Diodes Incorporated - DMN3042L-13

KEY Part #: K6396241

DMN3042L-13 Pricing (USD) [981851PC Stock]

  • 1 pcs$0.03767
  • 10,000 pcs$0.03372

Nimewo Pati:
DMN3042L-13
Manifakti:
Diodes Incorporated
Detaye deskripsyon:
MOSFET N-CH 30V 5.8A SOT23.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - DIACs, SIDACs, Transistors - IGBTs - Single, Transistors - Bipolè (BJT) - Single, Diodes - Rèkteur - Arrays, Modil pouvwa chofè, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - Objektif espesyal and Transistors - JFETs ...
Avantaj konpetitif:
We specialize in Diodes Incorporated DMN3042L-13 electronic components. DMN3042L-13 can be shipped within 24 hours after order. If you have any demands for DMN3042L-13, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

DMN3042L-13 Atribi pwodwi yo

Nimewo Pati : DMN3042L-13
Manifakti : Diodes Incorporated
Deskripsyon : MOSFET N-CH 30V 5.8A SOT23
Seri : -
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 30V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 5.8A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 2.5V, 10V
RD sou (Max) @ Id, Vgs : 26.5 mOhm @ 5.8A, 10V
Vgs (th) (Max) @ Id : 1.4V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 20nC @ 10V
Vgs (Max) : ±12V
Antre kapasite (Ciss) (Max) @ Vds : 860pF @ 15V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 720mW (Ta)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : SOT-23
Pake / Ka : TO-236-3, SC-59, SOT-23-3