[4045PC Stock]
- Nimewo Pati:
- APTM10DHM09T3G
- Manifakti:
- Microsemi Corporation
- Detaye deskripsyon:
- MOSFET 2N-CH 100V 139A SP3.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Single, Transistors - IGBTs - Arrays, Transistors - JFETs, Tiristors - SCR - Modil yo, Transistors - IGBTs - Modil yo, Transistors - Pwogramasyon Unijunction, Transistors - IGBTs - Single and Modil pouvwa chofè ...
- Avantaj konpetitif:
- We specialize in Microsemi Corporation APTM10DHM09T3G electronic components. APTM10DHM09T3G can be shipped within 24 hours after order. If you have any demands for APTM10DHM09T3G, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
APTM10DHM09T3G Atribi pwodwi yo
Nimewo Pati :
APTM10DHM09T3G
Manifakti :
Microsemi Corporation
Deskripsyon :
MOSFET 2N-CH 100V 139A SP3
Seri :
POWER MOS V®
Estati Pati :
Obsolete
FET Kalite :
2 N-Channel (Dual) Asymmetrical
Karakteristik FET :
Standard
Drenaj nan Voltage Sous (Vdss) :
100V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
139A
RD sou (Max) @ Id, Vgs :
10 mOhm @ 69.5A, 10V
Vgs (th) (Max) @ Id :
4V @ 2.5mA
Chaje Gate (Qg) (Max) @ Vgs :
350nC @ 10V
Antre kapasite (Ciss) (Max) @ Vds :
9875pF @ 25V
Pouvwa - Max :
390W
Operating Tanperati :
-40°C ~ 150°C (TJ)
Mounting Kalite :
Chassis Mount
Pake / Ka :
SP3
Pake Aparèy Founisè :
SP3
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