IXYS - IXGH56N60B3D1

KEY Part #: K6421919

IXGH56N60B3D1 Pricing (USD) [13450PC Stock]

  • 1 pcs$3.22596
  • 90 pcs$3.20991

Nimewo Pati:
IXGH56N60B3D1
Manifakti:
IXYS
Detaye deskripsyon:
IGBT 600V 330W TO247.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - FETs, MOSFETs - Single, Transistors - IGBTs - Single, Transistors - Bipolè (BJT) - Arrays, Transistors - FETs, MOSFETs - Arrays, Transistors - Bipolè (BJT) - Single, Diodes - Bridge rèktifikateur, Diodes - Zener - Arrays and Diodes - Rèkteur - Single ...
Avantaj konpetitif:
We specialize in IXYS IXGH56N60B3D1 electronic components. IXGH56N60B3D1 can be shipped within 24 hours after order. If you have any demands for IXGH56N60B3D1, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IXGH56N60B3D1 Atribi pwodwi yo

Nimewo Pati : IXGH56N60B3D1
Manifakti : IXYS
Deskripsyon : IGBT 600V 330W TO247
Seri : GenX3™
Estati Pati : Active
Kalite IGBT : PT
Voltage - Pèseptè ki emèt deba (Max) : 600V
Kouran - Pèseptè (Ic) (Max) : -
Kouran - Pèseptè batman (Icm) : 350A
Vce (sou) (Max) @ Vge, Ic : 1.8V @ 15V, 44A
Pouvwa - Max : 330W
Oblije chanje enèji : 1.3mJ (on), 1.05mJ (off)
Kalite Antre : Standard
Gate chaje : 138nC
Td (on / off) @ 25 ° C : 26ns/155ns
Kondisyon egzamen an : 480V, 44A, 5 Ohm, 15V
Ranvèse Tan Reverse (trr) : 100ns
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Through Hole
Pake / Ka : TO-247-3
Pake Aparèy Founisè : TO-247AD (IXGH)