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Si kote ou pa nan lis la, tanpri chwazi youn nan sa ki annapre yo:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. Lakay
  2. Pwodwi yo
  3. Disrè Semiconductor Pwodwi yo
  4. Transistors - FETs, MOSFETs - Arrays
  5. GWS4621L

Renesas Electronics America Inc. - GWS4621L

KEY Part #: K6523348

[4196PC Stock]

    Nimewo Pati:
    GWS4621L
    Manifakti:
    Renesas Electronics America Inc.
    Detaye deskripsyon:
    MOSFET 2N-CH.
    Manufacturer's standard lead time:
    Nan stok
    Lavi etajè:
    Yon ane
    Chip Soti nan:
    Hong Kong
    RoHS:
    Metòd peman:
    Chemen chajman:
    Kategori Fanmi yo:
    KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Rèkteur - Single, Tiristors - TRIACs, Transistors - IGBTs - Modil yo, Transistors - FETs, MOSFETs - Arrays, Tiristors - SCR, Transistors - Bipolè (BJT) - Arrays, Transistors - Bipolè (BJT) - Arrays, Pre-partial and Transistors - JFETs ...
    Avantaj konpetitif:
    We specialize in Renesas Electronics America Inc. GWS4621L electronic components. GWS4621L can be shipped within 24 hours after order. If you have any demands for GWS4621L, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    GWS4621L Atribi pwodwi yo

    Nimewo Pati : GWS4621L
    Manifakti : Renesas Electronics America Inc.
    Deskripsyon : MOSFET 2N-CH
    Seri : -
    Estati Pati : Obsolete
    FET Kalite : 2 N-Channel (Dual) Common Drain
    Karakteristik FET : Standard
    Drenaj nan Voltage Sous (Vdss) : 20V
    Kouran - Drenaj Kontinye (Id) @ 25 ° C : 10.1A (Ta)
    RD sou (Max) @ Id, Vgs : 9.8 mOhm @ 3A, 4.5V
    Vgs (th) (Max) @ Id : 1.5V @ 1mA
    Chaje Gate (Qg) (Max) @ Vgs : 11nC @ 4V
    Antre kapasite (Ciss) (Max) @ Vds : 1125pF @ 10V
    Pouvwa - Max : 3.6W (Ta)
    Operating Tanperati : -55°C ~ 150°C (TJ)
    Mounting Kalite : Surface Mount
    Pake / Ka : 4-XFLGA, CSP
    Pake Aparèy Founisè : 4-WLCSP (1.82x1.82)
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