Diodes Incorporated - DMG6898LSD-13

KEY Part #: K6522248

DMG6898LSD-13 Pricing (USD) [347340PC Stock]

  • 1 pcs$0.11412
  • 2,500 pcs$0.11355

Nimewo Pati:
DMG6898LSD-13
Manifakti:
Diodes Incorporated
Detaye deskripsyon:
MOSFET 2N-CH 20V 9.5A 8SO.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Rèkteur - Single, Transistors - IGBTs - Modil yo, Diodes - Rèkteur - Arrays, Tiristors - DIACs, SIDACs, Tiristors - TRIACs, Transistors - Objektif espesyal, Transistors - Bipolè (BJT) - Arrays and Modil pouvwa chofè ...
Avantaj konpetitif:
We specialize in Diodes Incorporated DMG6898LSD-13 electronic components. DMG6898LSD-13 can be shipped within 24 hours after order. If you have any demands for DMG6898LSD-13, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

DMG6898LSD-13 Atribi pwodwi yo

Nimewo Pati : DMG6898LSD-13
Manifakti : Diodes Incorporated
Deskripsyon : MOSFET 2N-CH 20V 9.5A 8SO
Seri : -
Estati Pati : Active
FET Kalite : 2 N-Channel (Dual)
Karakteristik FET : Logic Level Gate
Drenaj nan Voltage Sous (Vdss) : 20V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 9.5A
RD sou (Max) @ Id, Vgs : 16 mOhm @ 9.4A, 4.5V
Vgs (th) (Max) @ Id : 1.5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 26nC @ 10V
Antre kapasite (Ciss) (Max) @ Vds : 1149pF @ 10V
Pouvwa - Max : 1.28W
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake / Ka : 8-SOIC (0.154", 3.90mm Width)
Pake Aparèy Founisè : 8-SO